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BFR30LT1, BFR31LT1 JFET Amplifiers
N-Channel
Features
* Pb-Free Package is Available
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2 SOURCE 3 GATE 1 DRAIN
II IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III I I III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII III I I III III IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VDS Value 25 25 Unit Vdc Vdc Drain -Source Voltage Gate -Source Voltage VGS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
3 1 2
THERMAL CHARACTERISTICS
Characteristic
SOT-23 CASE 318 STYLE 10 1 x M
MxM
Symbol PD
Max 225 1.8 556
Unit
Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient
mW mW/C C/W
= 1 or 2 = Date Code
RqJA PD
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient
ORDERING INFORMATION
Device BFR30LT1 BFR30LT1G BFR31LT1 BFR31LT1G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
300 2.4 417
mW mW/C C/W C
RqJA
Junction and Storage Temperature
TJ, Tstg
-55 to +150
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
February, 2005 - Rev. 4
Publication Order Number: BFR30LT1/D
BFR30LT1, BFR31LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage (VGS = 10 Vdc, VDS = 0) (ID = 0.5 nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) ON CHARACTERISTICS Zero -Gate -Voltage Drain Current SMALL-SIGNAL CHARACTERISTICS Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 kHz) Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 mAdc, VDS = 10 Vdc) Input Capacitance Reverse Transfer Capacitance yfs BFR30 BFR31 BFR30 BFR31 yos BFR30 BFR31 Ciss Crss 40 20 - - - - 25 15 5.0 4.0 1.5 1.5 pF pF 1.0 1.5 0.5 0.75 4.0 4.5 - - mmhos mmhos (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS - - - -0.7 - - - 0.2 5.0 2.5 -3.0 -1.3 -4.0 -2.0 nAdc Vdc Vdc Symbol Min Max Unit
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
TYPICAL CHARACTERISTICS
5 VDS = 15 V VGS = 0 RS = 1 MW 14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 10 100 0 0.001 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 10 VDS = 15 V VGS = 0 f = 1 kHz
NF, NOISE FIGURE (dB)
4
3
2
1
Figure 1. Noise Figure versus Frequency
Figure 2. Noise Figure versus Source Resistance
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2
BFR30LT1, BFR31LT1
TYPICAL CHARACTERISTICS
1.2 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0 -0.2 V I D , DRAIN CURRENT (mA) VGS(OFF) ^ -1.2 V 1.2 VGS = 0 V 1.0 0.8 VDS = 15 V 0.6 0.4 0.2 0 -1.2 VGS(OFF) ^ -1.2 V
-0.4 V -0.6 V -0.8 V -1.0 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25
-0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS)
0
Figure 3. Typical Drain Characteristics
Figure 4. Common Source Transfer Characteristics
5
5 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 4 VGS(OFF) ^ -3.5 V 3 -1 V
VGS(OFF) ^ -3.5 V 4
3 VDS = 15 V 2
2 -2 V -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25
1
1
0 -5
-3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS)
0
Figure 5. Typical Drain Characteristics
Figure 6. Common Source Transfer Characteristics
10 VGS(OFF) ^ -5.8 V
10 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 8 VGS(OFF) ^ -5.8 V -1 V 6 -2 V 4 -3 V 2 -4 V -5 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25
8
6 VDS = 15 V 4
2 0 -7
-6
-5 -4 -3 -2 -1 VGS, GATE - SOURCE VOLTAGE (VOLTS)
0
Figure 7. Typical Drain Characteristics
Figure 8. Common Source Transfer Characteristics
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
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3
BFR30LT1, BFR31LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AK
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BFR30LT1/D

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